SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

Protons are injected from a back surface side of a semiconductor substrate to repair both defects within the semiconductor substrate and also defects in a channel forming region on a front surface side of the semiconductor substrate. As a result, variation in gate threshold voltage is reduced and leak current when a reverse voltage is applied is reduced. Provided is a semiconductor device including a semiconductor substrate that includes an n-type impurity region containing protons, on a back surface side thereof; and a barrier metal that has an effect of shielding from protons, on a front surface side of the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate that includes an n-type impurity region containing protons, on a back surface side thereof; and a barrier metal that has an effect of shielding from protons, on a front surface side of the semiconductor substrate, wherein the n-type impurity region includes:
a first impurity region that has an impurity region with a predetermined carrier concentration; anda second impurity region that has a carrier concentration lower than the predetermined carrier concentration and is provided closer to the back surface than the first impurity region.