Ohmic contact to semiconductor

摘要

A solution for forming an ohmic contact to a semiconductor layer is provided. A masking material is applied to a set of contact regions on the surface of the semiconductor layer. Subsequently, one or more layers of a device heterostructure are formed on the non-masked region(s) of the semiconductor layer. The ohmic contact can be formed after the one or more layers of the device heterostructure are formed. The ohmic contact formation can be performed at a processing temperature lower than a temperature range within which a quality of a material forming any semiconductor layer in the device heterostructure is damaged.

主权项

1. A device heterostructure comprising:
a semiconductor layer; a protruded region located directly on a first region of a surface of the semiconductor layer; and an ohmic contact located on a set of contact regions of the surface of the semiconductor layer distinct from the first region of the surface of the semiconductor layer, wherein the ohmic contact is formed without etching the semiconductor layer, and wherein the forming includes:
forming a set of highly conductive semiconducting layers on the set of contact regions, wherein the forming the set of highly conductive semiconducting layers includes grading a molar fraction of at least one element of a material forming the set of highly conductive semiconducting layers with respect to a distance from the set of contact regions; andforming an ohmic metal on the set of highly conductive semiconducting layers after formation of the protruded region, wherein the forming the ohmic contact is performed at a processing temperature lower than a temperature range within which a quality of a material forming any one of the set of semiconductor layers in the device heterostructure is damaged.