| 摘要 |
PROBLEM TO BE SOLVED: To provide silicon carbide substrates and silicon carbide ingots excellent in the uniformity of properties and also to provide manufacturing methods therefor.SOLUTION: The silicon carbide ingot manufacturing method comprising: a preparation step (S10) for preparing a base substrate of which an off angle in an off direction in one of the <11-20> and <1-100> directions relative to the (0001) face is 0.1° or more and 10° or less, and which is formed of a single crystal silicon carbide; and a deposition step (S20) for growing a silicon carbide layer on a surface of the base substrate. The deposition step (S20) forms a region having a (0001) facet surface 5 on a surface of a grown silicon carbide layer at an end of the upstream side where an acute intersection angle is formed provided that the <0001> direction angle of the base substrate in the off angle intersects a surface of the base substrate. |
