METHOD OF FORMING INTER-LEVEL DIELECTRIC STRUCTURES ON SEMICONDUCTOR DEVICES

摘要

A semiconductor device and a method for making the semiconductor device are provided. The method of making the semiconductor device may include patterning a layer for a first conductor and a second conductor, plating patterned portions of the layer to form the first conductor (304) and the second conductor (306), removing patterned material to form an air gap (402) between the first conductor and the second conductor, applying a self-supporting film (404), preferably graphene or silicene, on top of the first conductor and the second conductor to enclose the air gap, and reacting the self-supporting film causing the self-supporting film to be substantially non-conductive.