Low-temperature formation of silicon and silicon oxide structures.

摘要

A method for low-temperature formation of a silicon/silicon-oxide structure on a substrate is described wherein the method comprises: forming a first (poly)silane layer over at least part of a substrate; transforming said first (poly)silane layer directly into a (crystalline) silicon layer by exposing said first (poly)silane layer to UV radiation comprising one or more wavelengths within the range between 100 and 450 nm; forming a second (poly)silane layer over at least part of said substrate; and, transforming said second (poly)silane layer directly into a silicon oxide layer by exposing said second (poly)silane layer to oxygen and/or ozone and to UV light comprising one or more wavelengths within the range between 100 and 450 nm.