半導体装置

摘要

PROBLEM TO BE SOLVED: To provide an SGT structure having a structure for reducing resistance of an upper part of silicon columns and provide a manufacturing method of the SGT.SOLUTION: A semiconductor device comprises: a first columnar silicon layer formed on a planar silicon layer; a gate insulation film formed around the first columnar silicon layer; a first gate electrode formed around the gate insulation film; gate wiring connected to the first gate electrode; a first conductivity type first diffusion layer formed on an upper part of the first columnar silicon layer; a first conductivity type second diffusion layer formed on a lower part of the first columnar silicon layer and an upper part of the planar silicon layer; a first side wall composed of a laminated structure of insulation films and polysilicon formed on a side wall on an upper part of the first columnar silicon layer and an upper part of the first gate electrode; and a first contact formed on the first conductivity type first diffusion layer and on the first side wall.