| 摘要 |
A transparent flexible nanomesh having at least one conductive element and sheet resistance less than 300&OHgr;/□ when stretched to a strain of 200% in at least one direction. The nanomesh is formed by depositing a sacrificial film, depositing, etching, and oxidizing a first metal layer on the film, etching the sacrificial film, depositing a second metal layer, and removing the first metal layer to form a nanomesh on the substrate. |
