发明名称 Over-voltage protection circuit for a drive transistor
摘要 A drive transistor is connected to a resonant load in a low-side drive configuration. The voltage across the conduction terminals of the drive transistor is sensed and compared to an over-voltage threshold. An over-voltage signal is asserted in response to the comparison. The drive transistor is controlled by a PWM control signal in normal mode. In response to the assertion of the over-voltage signal, the drive transistor is forced to turn on (irrespective of the PWM control signal) to relieve the over-voltage condition. Operation of the circuit may be disabled or forced into soft start mode in response to the assertion of the over-voltage signal. Additionally, the pulse width of the PWM control signal may be reduced in response to the assertion of the over-voltage signal.
申请公布号 US9331474(B1) 申请公布日期 2016.05.03
申请号 US201414509427 申请日期 2014.10.08
申请人 STMICROELECTRONICS INTERNATIONAL N.V.;STMICROELECTRONICS S.R.L. 发明人 Mallik Ranajay;Abbatelli Luigi;Catalisano Giuseppe;Jain Akshat
分类号 H02H3/20;H02H9/04;H02H7/20;H02H1/00 主分类号 H02H3/20
代理机构 Gardere Wynne Sewell LLP 代理人 Gardere Wynne Sewell LLP
主权项 1. A circuit, comprising: a drive transistor having a control terminal configured to receive a drive signal and having a first conduction terminal and a second conduction terminal, wherein said first conduction terminal is configured for connection to a load circuit; a sense circuit configured to sense a voltage across the first and second conduction terminals; a comparator circuit configured to compare the sensed voltage to voltage threshold and generate a signal indicative of an over-voltage condition; and drive circuitry configured to generate said drive signal in response to a pulse width modulation (PWM) signal, said drive circuit including a force on circuit actuated in response to said signal indicative of the over-voltage condition to force said drive transistor to turn on irrespective of the PWM signal.
地址 Amsterdam NL