发明名称 WORD LINE DEPENDENT TWO STROBE SENSING MODE FOR NONVOLATILE STORAGE ELEMENTS
摘要 A non-volatile storage system includes a plurality of non-volatile storage elements, a plurality of bit lines connected to the non-volatile storage elements, a plurality of word lines connected to the non-volatile storage elements, and one or more control circuits connected to the bit lines and word lines. The one or more control circuits perform programming, verifying, reading and erasing for the non-volatile storage elements. When verifying, a first subset of bit lines connected to non-volatile storage elements are charged to allow for sensing, while a second subset of bit lines are not charged. When reading, a two strobe sensing process is selectively used to more accurately read data from the non-volatile storage elements.
申请公布号 US2016118134(A1) 申请公布日期 2016.04.28
申请号 US201414525678 申请日期 2014.10.28
申请人 SANDISK TECHNOLOGIES INC. 发明人 Dutta Deepanshu;Miao Xiaochang;Hemink Gerrit Jan
分类号 G11C16/34;G11C16/24;G11C16/10;G11C16/28 主分类号 G11C16/34
代理机构 代理人
主权项 1. A method of operating non-volatile storage, comprising: identifying a selected word line for a reading process, a set of non-volatile storage elements are connected to the selected word line; determining whether the selected word line is within a threshold distance of a set of bit line contacts for bit lines connected to the set of non-volatile storage elements; performing the reading process using one or more two strobe sensing operations if the selected word line is within a threshold distance of the set of bit line contacts; and performing the reading process using one or more one strobe sensing operations if the selected word line is not within the threshold distance of the set of bit line contacts.
地址 Plano TX US