SEMICONDUCTOR DEVICE AND ULTRAVIOLET LIGHT EMITTING ELEMENT

摘要

The objective of the present invention is to improve the moisture resistance of a semiconductor device. An electrode (90) of a semiconductor device (100) is provided with a contact electrode (91), and a pad electrode (92) formed on the obverse side of the contact electrode (91). An insulating film (10) is present on the obverse (31a) of an AlGaN layer (31) so as to surround the region of the contact electrode (91) where contact is made with the AlGaN layer (31). A passivation film (11) is formed at least on the pad electrode (92), said film (11) having an open section (13) where the central section of the pad electrode (92) is exposed. In the electrode (90), the pad electrode (92) is formed spanning the contact electrode (91) and the insulating film (10), and an Al layer (93) is provided below the pad electrode (92), said Al layer (93) including the opening (13) in plan view.