ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE CAPABLE OF PREVENTING LATCH-UP ISSUE CAUSED BY UNEXPECTED NOISE

摘要

An electrostatic discharge protection structure comprises an isolation layer, a high voltage P-well, an N-well, a P-well, a first doped region of N-type conductivity, a second doped region of P-type conductivity, a third doped region of N-type conductivity, a fourth doped region of P-type conductivity, an anode, and a cathode. The isolation layer is disposed on a substrate. The high voltage P-well is disposed on the isolation layer. The N-well is disposed in the high voltage P-well. The P-well is disposed in the high voltage P-well, and the P-well is separated from the N-well. The first and the second doped regions are disposed in the N-well. The third and the fourth doped regions are disposed in the P-well. The anode is electrically connected to the first doped region and the second doped region, and the cathode is electrically connected to the fourth doped region.

主权项

1. An electrostatic discharge protection structure, comprising:
an isolation layer disposed on a substrate; a high voltage P-well disposed on the isolation layer; an N-well disposed in the high voltage P-well, wherein a doping concentration of the N-well is higher than a doping concentration of the high voltage P-well; a P-well disposed in the high voltage P-well, wherein a doping concentration of P-well is higher than the doping concentration of the high voltage P-well, and the P-well is separated from the N-well; a first doped region of N-type conductivity disposed in the N-well; a second doped region of P-type conductivity disposed in the N-well; a third doped region of N-type conductivity disposed in the P-well; a fourth doped region of P-type conductivity disposed in the P-well; a first electrode electrically connected to the first doped region and the second doped region; and a second electrode electrically connected to the fourth doped region but not directly electrically connected to the third doped region; wherein the third doped region and the fourth doped region form a diode with the third doped region being a cathode of the diode and the fourth doped region being an anode of the diode.