发明名称 |
MASK BLANK, METHOD FOR MANUFACTURING MASK BLANK, AND METHOD FOR MANUFACTURING TRANSFER MASK |
摘要 |
PROBLEM TO BE SOLVED: To provide a mask blank that hardly leaves foreign substances derived from a resist film and has few foreign substance defects when developed, and a transfer mask excellent in pattern accuracy.SOLUTION: The mask blank includes, on substrate: a thin film to form a transfer pattern; a resist underlay film disposed on the above thin film and formed of a resist underlay composition comprising a polymer containing a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film disposed on the resist underlay film and formed of a resist composition; and a mixture film disposed to intervene between the resist underlay film and the resist film and formed of a mixture component containing the resist underlay composition and the resist composition.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016066019(A) |
申请公布日期 |
2016.04.28 |
申请号 |
JP20140195862 |
申请日期 |
2014.09.25 |
申请人 |
HOYA CORP;NISSAN CHEM IND LTD |
发明人 |
HIROMATSU TAKAHIRO;HASHIMOTO MASAHIRO;SAKAIDA KOJI;MIZUOCHI RYUTA;SAKAMOTO RIKIMARU;NAGAI MASAKI |
分类号 |
G03F1/50;C08F220/28;G03F7/11;H01L21/027 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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