发明名称 APPARATUSES AND METHODS USING DUMMY CELLS PROGRAMMED TO DIFFERENT STATES
摘要 Apparatuses and methods for reducing capacitive loading are described. An example apparatus may include a plurality of memory subblocks of a memory block. A. plurality of word lines may be associated with the plurality of subblocks. The word lines may be further associated with multiple strings within the subblocks. A subset of the word lines may be dummy word lines. The cells of the dummy word lines may be programmed to a plurality of states. The states may be configured to deactivate and/or float unselected strings in the subblocks during certain memory operations.
申请公布号 US2016104533(A1) 申请公布日期 2016.04.14
申请号 US201414509953 申请日期 2014.10.08
申请人 Micron Technology, Inc. 发明人 TANZAWA TORU;Yip Aaron
分类号 G11C16/04;G11C16/10 主分类号 G11C16/04
代理机构 代理人
主权项 1. An apparatus, comprising: a first memory string including first and second dummy memory cells; a second memory string including first and second dummy memory cells; a data line coupled to the first memory string and the second memory string; and a control unit configured to provide during a memory access operation first and second control signals to activate the first and second dummy memory cells of one of the first and second memory strings and to further deactivate the first or second dummy memory cell of the other one of the first and second memory strings.
地址 Boise ID US