PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

摘要

Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

主权项

1. A photoresist composition, comprising:
a first polymer comprising an acid labile group; a second polymer comprising:
a first unit formed from a first monomer having the following general formula (I): wherein: P is a polymerizable functional group; R1 is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons; Z is a spacer unit chosen from substituted and unsubstituted linear or branched aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S— and —COO—; and n is an integer from 0 to 5; anda second unit formed from a second monomer having a basic moiety, wherein the first monomer and the second monomer are different;wherein the second polymer is insoluble in alkaline developer, is free of acid-labile groups, and has a surface energy lower than a surface energy of the first polymer; a photoacid generator; and a solvent.