| 摘要 |
PURPOSE:To simplify a manufacturing process and achieve low cost by a method wherein a groove and a first to third impurity area are in turn formed and all of these are formed self-alignedly. CONSTITUTION:After an oxide film 12 is grown as an insulation film on a substrate 11, an opening 13 is formed on the oxide film 12. Next, using the oxide film 12 as a mask, anisotropic etching is performed on the substrate 11, forming a V-shaped groove 14. After a first impurity area 15 is formed, the oxide film 12 is entirely removed. Next, after a gate oxide film 16 is grown on the substrate 11 surface, a gate electrode is selectively formed on the substrate and a second insulation film 19 is formed on the gate electrode and the substrate. With this gate electrode as a mask, the substrate and a second impurity area of an opposite conductivity type are formed and with the second insulation film 19 on the groove and the gate electrode as a mask, the source area of a third impurity area 21 having the same conductivity type as the substrate are formed on both side of the groove in the second impurity area. This makes it possible to form an impurity area self-alignedly and to simplify a manufacturing process. |
