Three-dimensional semiconductor devices with current path selection structure

摘要

Provided are three-dimensional semiconductor devices and methods of operating the same. The three-dimensional semiconductor devices may include active patterns arranged on a substrate to have a multi-layered and multi-column structure and drain patterns connected to respective columns of the active patterns. The methods may include a layer-selection step connecting a selected one of layers of the active patterns selectively to the drain patterns. For example, the layer-selection step may be performed in such a way that widths of depletion regions to be formed in end-portions of the active patterns are differently controlled depending on to a height from the substrate.

主权项

1. A three-dimensional semiconductor memory device, comprising:
a common source structure, a string selection structure, and a memory structure on a substrate, the memory structure interposed between the common source structure and the string selection structure, wherein the memory structure comprises a plurality of sequentially stacked active patterns elongated parallel to a top surface of the substrate and including first and second end-portions, gate patterns extending perpendicular to the top surface of the substrate, and memory elements interposed between the active patterns and the gate patterns, and wherein the string selection structure comprises:
drain patterns elongated perpendicular to the top surface of the substrate to connect the first end-portions of the active patterns to each other; andlayer-selection patterns sequentially stacked to control an energy band structure of respective ones of the first end-portions of the sequentially stacked active patterns located at a same level.