Plasma pre-clean module and process

摘要

A method for integrated circuit fabrication can include removing silicon oxide by a pre-clean process. The pre-clean process can include depositing a halogen-containing material on the surface of a substrate in a first reaction chamber, and transferring the substrate having the halogen-containing material to a second reaction chamber. Silicon oxide material can be removed from a surface of the substrate by sublimating the halogen-containing material in the second reaction chamber. A target material, such as a conductive material, may subsequently be deposited on the substrate surface in the second reaction chamber.

主权项

1. A method for integrated circuit fabrication, the method comprising:
removing a silicon oxide material from a surface of a substrate, wherein removing the silicon oxide material comprises:
depositing a halogen-containing material on the surface of the substrate in a first reaction chamber;transferring the substrate having the halogen-containing material to a second reaction chamber; andsublimating the halogen-containing material in the second reaction chamber, wherein sublimating the halogen-containing material comprises exposing the halogen-containing material to a plasma generated by a remote plasma unit; and subsequently depositing a conductive material on the surface of the substrate in the second reaction chamber.