Semiconductor device cleaning method and apparatus

摘要

A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

主权项

1. A method of semiconductor fabrication, the method comprising:
providing a wafer having a pattern includes a plurality of repeating features, wherein each repeating features is extending in a first direction, wherein the plurality of repeating features include one of gate structures and interconnect lines of a semiconductor device; providing a first spray bar spaced a distance from the wafer and having a length extending in a second direction perpendicular to the first direction; dispensing a first cleaning chemical spray from the first spray bar onto an entirety of a first portion of the wafer while maintaining the wafer at a first orientation and while not rotating the wafer, wherein the first portion is defined from a center point to a first edge of the wafer, wherein during the dispensing the first cleaning chemical spray traverses the first portion in the first direction; after completing the dispensing of the first cleaning chemical spray, rotating the wafer to a second orientation; and dispensing a second cleaning chemical spray from the first spray bar onto an entirety of a second portion of the rotated wafer while maintaining the wafer at the second orientation and while not rotating the wafer, wherein the second portion is defined from the center point to a second edge of the wafer, the second edge opposing the first edge, wherein the first cleaning chemical spray is not incident the second portion of the wafer and wherein the second cleaning chemical spray is not incident the first portion of the wafer.