| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device according to an embodiment includes a SiC layer, an electrode electrically connected to the SiC layer and an impurity region provided between the SiC layer and the electrode. The impurity region includes first position and second position, the first position having highest concentration of an impurity in the impurity region, the highest concentration being not lower than 1×1020 cm−3 and not higher than 5×1022 cm−3, the second position having concentration of the impurity one digit lower than the highest concentration, the first position being between the electrode and the second position, a distance between the first position and the second position being 50 nm or shorter. |
| 申请公布号 |
US2016087036(A1) |
申请公布日期 |
2016.03.24 |
| 申请号 |
US201514813692 |
申请日期 |
2015.07.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SHIMIZU Tatsuo;IIJIMA Ryosuke;NISHIO Johji;OHASHI Teruyuki |
| 分类号 |
H01L29/08;H01L29/868;H01L21/225;H01L29/43;H01L21/02;H01L29/78;H01L29/40 |
主分类号 |
H01L29/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a SiC layer; an electrode electrically connected to the SiC layer; and an impurity region provided between the SiC layer and the electrode, the impurity region including first position and second position, the first position having highest concentration of an impurity in the impurity region, the highest concentration being not lower than 1×1020 cm−3 and not higher than 5×1022 cm−3, the second position having concentration of the impurity one digit lower than the highest concentration, the first position being between the electrode and the second position, a distance between the first position and the second position being 50 nm or shorter. |
| 地址 |
Minato-ku JP |
