Dual channel hybrid semiconductor-on-insulator semiconductor devices

摘要

Trenches are formed through a top semiconductor layer and a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A selective epitaxy is performed to form bulk semiconductor portions filling the trenches and in epitaxial alignment with the semiconductor material of a handle substrate. At least one dielectric layer is deposited over the top semiconductor layer and the bulk semiconductor portions, and is patterned to form openings over selected areas of the top semiconductor layer and the bulk semiconductor portions. A semiconductor alloy material is deposited within the openings directly on physically exposed surfaces of the top semiconductor layer and the bulk semiconductor portions. The semiconductor alloy material intermixes with the underlying semiconductor materials in a subsequent anneal. Within each of the SOI region and the bulk region, two types of semiconductor material portions are formed depending on whether a semiconductor material intermixes with the semiconductor alloy material.

主权项

1. A semiconductor structure comprising:
a handle substrate comprising a single crystalline semiconductor material; and material portions that are located on said handle substrate,wherein said material portions comprise:
a first material portion located in a first region of said semiconductor structure and including a first buried insulator portion and a first semiconductor-on-insulator (SOI) portion comprising a first semiconductor material; a second material portion located in a second region of said semiconductor structure and including a second buried insulator portion and a second SOI portion comprising an alloy of said first semiconductor material and another semiconductor material; and a third material portion located in a third region of said semiconductor structure and including an epitaxial semiconductor material portion including a second semiconductor material that is epitaxially aligned to said single crystalline semiconductor material in said handle substrate.