| 发明名称 |
SEMICONDUCTOR DEVICE HAVING MODIFIED PROFILE METAL GATE |
| 摘要 |
A semiconductor device having a semiconductor substrate with a dielectric layer disposed thereon. A trench is defined in the dielectric layer. A metal gate structure is disposed in the trench. The metal gate structure includes a first layer and a second layer disposed on the first layer. The first layer extends to a first height in the trench and the second layer extends to a second height in the trench; the second height is greater than the first height. In some embodiments, the second layer is a work function metal and the first layer is a dielectric. In some embodiments, the second layer is a barrier layer. |
| 申请公布号 |
US2016079383(A1) |
申请公布日期 |
2016.03.17 |
| 申请号 |
US201514952733 |
申请日期 |
2015.11.25 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Yu-Lien;Liu Chi-Wen;Wann Clement Hsingjen;Tsai Ming-Huan;Chen Zhao-Cheng |
| 分类号 |
H01L29/49;H01L29/423 |
主分类号 |
H01L29/49 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate having a dielectric layer disposed thereover, wherein a trench is defined in the dielectric layer; and a metal gate structure disposed in the trench, wherein the metal gate structure includes a first layer and a second layer disposed over the first layer, wherein the first layer extends to a first height in the trench and the second layer extends to a second height in the trench, the second height is greater than the first height. |
| 地址 |
Hsin-Chu TW |
