| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has a high deep-hole processability and that can achieve deep etching with ease, and that facilitates processes including formation of a capacitance insulating film and a lower electrode.SOLUTION: A method includes the following steps of: forming a contact plug 104 on a semiconductor base substance; forming an insulating film 106; forming a first sacrificial interlayer film; forming a line-like first opening extending in a first direction on the first sacrificial interlayer film until the insulating film 106 is exposed; burying by a second sacrificial interlayer film 114; forming a line-like second opening extending in a second direction different from the first direction on the first sacrificial interlayer film and the second sacrificial interlayer film 114 until the insulating film 106 is exposed; burying by the second sacrificial interlayer film 114; removing the first sacrificial interlayer film by etching until the insulating film 106 is exposed; and removing the insulating film 106 by etching to a depth that the contact plug 104 is exposed, by using the second sacrificial interlayer film 114 as a mask.SELECTED DRAWING: Figure 14 |
