发明名称 |
METHOD FOR MANUFACTURING GERMANIDE INTERCONNECT STRUCTURES |
摘要 |
Method for forming an interconnect structure, comprising the steps of: forming a recessed structure in a dielectric material on a substrate; at least partially filling said recessed structure with a metal chosen from the group consisting of copper, nickel and cobalt; introducing the substrate in a CVD reactor; bringing the substrate in the CVD reactor to a soak temperature and subsequently performing a soak treatment by supplying a germanium precursor gas to the CVD reactor at the soak temperature, thereby substantially completely converting the metal in the recessed structure to a germanide. |
申请公布号 |
EP2850653(B1) |
申请公布日期 |
2016.03.16 |
申请号 |
EP20130722750 |
申请日期 |
2013.05.14 |
申请人 |
IMEC VZW |
发明人 |
CARBONELL, LAURE ELISA;PETER, ANTONY PREMKUMAR;SCHAEKERS, MARC;VAN ELSHOCHT, SVEN;TOKEI, ZSOLT |
分类号 |
H01L21/768;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|