| 发明名称 | Semiconductor field-effect transistor, memory cell and memory device | ||
| 摘要 | Semiconductor device formed by a first conductive strip of semiconductor material; a control gate region of semiconductor material, facing a channel portion of the first conductive strip, and an insulation region arranged between the first conductive strip and the control gate region. The first conductive strip includes a conduction line having a first conductivity type and a control line having a second conductivity type, arranged adjacent and in electrical contact with each other, and the conduction line forms the channel portion, a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion. | ||
| 申请公布号 | US9287284(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414311061 | 申请日期 | 2014.06.20 |
| 申请人 | Micron Technology, Inc. | 发明人 | Rolandi Paolo;Calligaro Cristiano;Pascucci Luigi |
| 分类号 | H01L27/115;H01L21/822;H01L27/06;H01L27/12;H01L29/78;H01L27/105 | 主分类号 | H01L27/115 |
| 代理机构 | Wells St. John P.S. | 代理人 | Wells St. John P.S. |
| 主权项 | 1. A method comprising: forming a conductive strip of semiconductor material, the conductive strip including a conduction line of a first conductivity type and a control line of a second opposing conductivity type, the conduction line being elevationally over and in electrical contact with the control line, and the conduction line including a channel portion, and a first conduction portion and a second conduction portion arranged on opposite sides of the channel portion; forming a control gate region of semiconductor material, facing the channel portion of the conductive strip; and forming an insulation region arranged between the conductive strip and the control gate region. | ||
| 地址 | Boise ID US | ||