| 摘要 |
The present disclosure relates to a semiconductor light emitting device which comprises: multiple semiconductor layers which have two long edges opposed to each other and two short edges opposed to each other; at least one of a first branch electrode which extends from one long edge to the other long edge on a first semiconductor layer exposed by removing a second semiconductor layer and an active layer, and a second branch electrode which extends from one long edge to the other long edge on the second semiconductor layer; an insulation reflection layer which is formed to cover multiple semiconductor layers, the first branch electrode. and the second branch electrode, and reflects light from the active layer; a first electrode which is provided on one long edge side to be electrically connected to the first semiconductor layer; and a second electrode which is provided on the other long edge side to be electrically connected to the second semiconductor layer. |
