Forming strained and relaxed silicon and silicon germanium fins on the same wafer

摘要

Various embodiments form strained and relaxed silicon and silicon germanium fins on a semiconductor wafer. In one embodiment a semiconductor wafer is formed. The semiconductor wafer comprises a substrate, a dielectric layer, and a strained silicon germanium (SiGe) layer. At least one region of the strained SiGe layer is transformed into a relaxed SiGe region. At least one strained SiGe fin is formed from a first strained SiGe region of the strained SiGe layer. At least one relaxed SiGe fin is formed from a first portion of the relaxed SiGe region. Relaxed silicon is epitaxially grown on a second strained SiGe region of the strained SiGe layer. Strained silicon is epitaxially grown on a second portion of the relaxed SiGe region. At least one relaxed silicon fin is formed from the relaxed silicon. At least one strained silicon fin is formed from the strained silicon.

主权项

1. A semiconductor wafer comprising:
a substrate; a dielectric layer formed on the substrate; a pFET region comprising
at least one fin comprising a single layer of strained silicon germanium, andat least one fin comprising a single layer of relaxed silicon germanium; and a NFET region comprising;
at least one fin comprising strained silicon, wherein the silicon in the single layer of strained silicon is epitaxially strained based on relaxed silicon germanium, andat least one fin comprising relaxed silicon, wherein the silicon in the single layer of relaxed silicon is epitaxially relaxed based on strained silicon germanium.