BULK AND DIELECTRIC-ISOLATED FINFET-BASED INTEGRATED CIRCUIT

摘要

A method for forming a dielectric-isolated bulk fin field-effect transistor (finFET) device includes forming a second isolation layer over a first structure including multiple partially exposed fins and horizontal areas including a first isolation layer. The second isolation layer is removed from horizontal areas of a first portion of the first structure. An oxide layer is formed under the fins of the first portion of the first structure. The second isolation layer is removed in order to expose the partially exposed fins and horizontal areas of the first structure to form a second structure, on which gate regions are formed.

主权项

1. A fin field-effect transistor (finFET) circuit, the finFET circuit comprising:
a substrate; a plurality of bulk finFET devices formed on the substrate; and a plurality of dielectric-isolated bulk finFET devices, at least some of the dielectric-isolated bulk finFET devices including a fin that is isolated from the substrate by an oxide layer formed under an active portion of the fin, wherein the active portion of the fin is above a first isolation layer.