| 摘要 |
PROBLEM TO BE SOLVED: To provide an isolation structure of a semiconductor device.SOLUTION: An isolation structure of a semiconductor device has a floor isolation region, a trench filled with dielectric material above the floor isolation region, and a side wall isolation region extending downwards from the bottom portion of the trench to the floor isolation region. In this structure, relatively deep isolated pockets are provided in the semiconductor substrate, and a limitation to the depth of the trench to be etched is imposed on the substrate. Various kinds of devices such as MOSFET, a bipolar transistor, a diode and JFET are formed in the isolated pockets.SELECTED DRAWING: Figure 3C |
