发明名称 Semiconductor device and method of manufacture thereof
摘要 A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.
申请公布号 US9269654(B2) 申请公布日期 2016.02.23
申请号 US201414180146 申请日期 2014.02.13
申请人 Infineon Technologies AG 发明人 Willkofer Stefan;Wahl Uwe;Knott Bernhard;Hammer Markus;Strasser Andreas
分类号 H01F5/00;H01F27/28;H01L23/495;H01L23/48;H01L23/522;H01L25/065;H01L49/02;H01L23/64;H01L23/00;H01F17/00 主分类号 H01F5/00
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor package comprising: a first semiconductor chip comprising a first coil disposed over a first semiconductor substrate; an isolating film disposed on the first semiconductor chip; a second semiconductor chip comprising a second coil and a second semiconductor substrate, wherein the second semiconductor substrate is disposed over the second coil, wherein the second semiconductor chip is attached to the first semiconductor chip with the isolating film, wherein the first coil of the first semiconductor chip is inductively coupled through the isolating film with the second coil of the second semiconductor chip to form a coreless transformer; a through hole disposed in the second semiconductor substrate, wherein the through hole extends through the entire second semiconductor substrate so as to expose a contact pad, wherein the contact pad is disposed over the contact pad, wherein the contact pad and the second coil are disposed between the second semiconductor substrate and the isolating film; and an encapsulating material disposed within the through hole in the second semiconductor substrate.
地址 Neubiberg DE