Solid-state image sensor and imaging system

摘要

At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise.

主权项

1. A CMOS image sensor comprising:
a substrate having a light-receiving section; a first wiring layer arranged above the substrate; a second wiring layer arranged above the substrate, a distance between the substrate and the second wiring layer being larger than a distance between the substrate and the first wiring layer; a first layer comprising Si and O, and arranged above the substrate; a second layer comprising Si and N, and arranged above the light-receiving section, a distance between the light-receiving section and the second layer being smaller than the distance between the substrate and the first wiring layer; a third layer comprising Si, N and O, and arranged above the substrate; a fourth layer comprising Si and N, and arranged above the substrate; and an insulating layer arranged between the second layer and the fourth layer, wherein the second wiring layer is arranged between the fourth layer and the substrate, the first layer is arranged between the second layer and the light-receiving section, and the third layer is arranged between the fourth layer and the insulating layer.