| 发明名称 | Method of manufacturing semiconductor element | ||
| 摘要 | A method of manufacturing a semiconductor element is provided. The method includes the following steps. A carrier and a mold are provided. A first patterned conductive layer including a plurality of traces is formed on the carrier. A second patterned conductive layer is formed on the first patterned conductive layer. The carrier is disposed with the mold to form at least one mold cavity. The mold cavity is infused with a molding material. The molding material fills the mold cavity to encapsulate the first and second patterned conductive layers. The carrier is removed by etching to expose the plurality of traces embedded in the molding material without affecting the width of the traces. | ||
| 申请公布号 | US9269601(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US200912534166 | 申请日期 | 2009.08.03 |
| 申请人 | ADVANPACK SOLUTIONS PTE LTD. | 发明人 | Jimmy Chew Hwee-Seng;Kian Ong Chee;Chichik Abd. Razak Bin |
| 分类号 | H01L21/50;H01L21/683;H01L23/498;H01L23/00 | 主分类号 | H01L21/50 |
| 代理机构 | Rabin & Berdo, P.C. | 代理人 | Rabin & Berdo, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor element, comprising the steps of: providing a carrier and a mold; forming a first patterned conductive layer comprising a plurality of traces, on the carrier; forming a second patterned conductive layer on the first patterned conductive layer; disposing the carrier with the mold to form at least one mold cavity; infusing the mold cavity with a molding material, wherein the molding material fills the mold cavity to encapsulate the first and second patterned conductive layers; and removing the carrier by etching to expose the plurality of traces embedded in the molding material without affecting the width of the traces. | ||
| 地址 | Singapore SG | ||