发明名称 High Voltage Step Down Regulator with Breakdown Protection
摘要 A high voltage step regulator, such as would be used to provide a regulated low voltage (on the order of a few volts) from a high voltage external supply (e.g. 12V), is presented. To protect the output transistor, through which the output is provided from the input, from breakdown, a depletion type device is connected between the supply and the output transistor. The control gate of the depletion device is then connected to the output level of the regulator. This reduces the voltage drop across the output transistor, helping to avoid violating design rules (EDR) on how great a voltage differential can be placed across the output transistor. Examples of applications for such a circuit are for various operating voltages on a non-volatile memory chip operating with a high voltage power supply.
申请公布号 US2016049206(A1) 申请公布日期 2016.02.18
申请号 US201414459795 申请日期 2014.08.14
申请人 SanDisk Technologies Inc. 发明人 Huynh Jonathan;Park Jongmin;Pham Trung
分类号 G11C16/30;G11C16/26;H02M3/158;G11C16/10 主分类号 G11C16/30
代理机构 代理人
主权项 1. (canceled)
地址 Plano TX US