| 摘要 |
The present invention relates to a bipolar electrostatic chuck used for semiconductor fabrication equipment and a fabricating method thereof. The bipolar electrostatic chuck includes: a metal support that has an incised pattern corresponding to an electrode pattern; an insulating layer that is mounted on the top surface of the metal support and has the same surface pattern as the incised pattern; and an electrode material that is mounted on the top surface of the insulating layer and fills groove parts of the surface pattern. The electrode material that fills the groove parts of the surface pattern makes up the electrode pattern. Meanwhile, the fabricating method of the bipolar electrostatic chuck comprises: forming, on the top surface of the metal support, the incised pattern corresponding to the electrode pattern of the metal support; forming the insulating layer on the top surface of the metal support; forming the electrode material on the top surface of the insulating layer; and forming the electrode pattern, wherein the electrode pattern is formed by removing the protruded electrode material, thereby exposing the insulating layer while a protective layer may be formed on the electrode pattern and the exposed insulating layer. The bipolar electrostatic chuck according to the present invention is fabricated when the electrode pattern is formed by line-cutting the metal support to produce the incised pattern corresponding to the electrode pattern, coating and hardening the electrode material and partially removing the electrode material. Accordingly, the present invention is capable of achieving a high degree of adhesion by precisely adjusting the clearance between the electrodes of the electrode pattern and increasing yield rates by controlling the interference or short circuits between the electrode patterns. |
