| 发明名称 |
REDUCING THE IMPACT OF CHARGED PARTICLE BEAMS IN CRITICAL DIMENSION ANALYSIS |
| 摘要 |
Measuring a feature on a wafer, the feature including at least two edges. Scanning the wafer with an electron beam over the length of a first scan interval that includes at least a portion of a first edge of the feature. Preventing the electron beam from illuminating the wafer while moving the scan position of the electron beam across a portion of the wafer to a second scan interval that includes at least a portion of a second edge of the feature. Scanning the wafer with an electron beam over the length of the second scan interval. Determining a distance between the first and second edges of the feature. |
| 申请公布号 |
US2016040986(A1) |
申请公布日期 |
2016.02.11 |
| 申请号 |
US201414454748 |
申请日期 |
2014.08.08 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Peterson Kirk D.;Shao Dongbing |
| 分类号 |
G01B15/04;H01J37/28 |
主分类号 |
G01B15/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for measuring a feature on a wafer using, the feature including at least two edges, the method comprising:
scanning the wafer with an electron beam over the length of a first scan interval that includes at least a portion of a first edge of the feature; preventing the electron beam from illuminating the wafer while moving the scan position of the electron beam across a portion of the wafer to a second scan interval that includes at least a portion of a second edge of the feature; scanning the wafer with the electron beam over the length of the second scan interval; and determining a distance between the first and second edges of the feature. |
| 地址 |
Armonk NY US |
