Semiconductor component with dynamic behavior

摘要

One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side; at least two trenches arranged in the semiconductor body and extending into the semiconductor body and arranged at a distance from one another; and a field electrode arranged in the at least two trenches adjacent to the drift zone. The at least two trenches are arranged at a distance from the second semiconductor zone in the vertical direction, a distance between the trenches and the second semiconductor zone is greater than 1.5 times the mutual distance between the trenches, and a doping concentration of the drift zone in a section between the trenches and the second semiconductor zone differs by at most 35% from a minimum doping concentration in a section between the trenches.

主权项

1. A semiconductor component comprising:
a semiconductor body having a first side and a second side; a drift zone; a first semiconductor zone doped complementarily to the drift zone and adjacent to the drift zone in a direction of the first side; a second semiconductor zone of the same conduction type as the drift zone adjacent to the drift zone in a direction of the second side, and having a higher doping concentration than the drift zone; at least two trenches arranged in the semiconductor body and extending into the semiconductor body proceeding from the first side in a vertical direction right into the drift zone and arranged at a distance from one another in a lateral direction of the semiconductor body; and a field electrode arranged in the at least two trenches adjacent to the drift zone; wherein the drift zone comprises a first drift zone section between the trenches, and a second drift zone section between the trenches and the second semiconductor zone, wherein a doping concentration in the second drift zone section differs by at most 35% from a minimum doping concentration in the first drift zone section, and wherein a distance between the trenches and the second semiconductor zone and a doping concentration of the second drift zone section are selected in such a way that an integral of the doping concentration of the second drift zone section is greater than or equal to 1.5 times the breakdown charge of the semiconductor material of the drift zone.