| 摘要 |
PROBLEM TO BE SOLVED: To provide: a group III nitride semiconductor light-emitting device which makes possible to diffuse current in a light-emission face of a light-emitting layer and to suitably take out light to the outside; and a method for manufacturing such a light-emitting device.SOLUTION: A light-emitting device 100 has an insulative multilayered film CB1 which is in contact with a p-type contact layer 180 at a first face U1, and is in contact with a transparent electrode TE1 at a second face U2. The insulative multilayered film CB1 is a distributed bragg reflection film formed in a region including a projection region PR1 created by projecting a p electrode P1 on the p-type contact layer 180. The insulative multilayered film CB1 has: a first region R1 thicker, in film thickness, than 95% of a maximum film thickness; and a second region R2 equal to or smaller than 95% of the maximum film thickness in film thickness. In the second region R2, the second face U2 of the insulative multilayered film CB1 has a face L1 inclined toward the first face U1 of the insulative multilayered film CB1 and including a concave portion X1 which is concave.SELECTED DRAWING: Figure 3 |
