发明名称 |
ALUMINUM ELECTRODE, METHOD OF FORMING AN ALUMINUM ELECTRODE AND ELECTRONIC DEVICE THEREWITH |
摘要 |
The present disclosure relates to an aluminum electrode, a method of forming an aluminum electrode and an electronic device therewith. An aluminum electrode according to one aspect of the present disclosure comprises: a bottom layer consisting of molybdenum; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C. An aluminum electrode according to one embodiment of the present disclosure eliminates the mouse bite phenomenon. An aluminum electrode according to another aspect of the present disclosure comprises: a bottom layer consisting of a metal or metal-alloy nitride; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C. An aluminum electrode according to another embodiment of the present disclosure eliminates both of the mouse bite phenomenon and the undercut phenomenon, and can further arrive at a desired profile angle by controlling the content of nitrogen. |
申请公布号 |
US2016035452(A1) |
申请公布日期 |
2016.02.04 |
申请号 |
US201414527518 |
申请日期 |
2014.10.29 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
WANG CAN;LIU FANG;LIU YINGWEI |
分类号 |
H01B1/02;B32B15/01 |
主分类号 |
H01B1/02 |
代理机构 |
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代理人 |
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主权项 |
1. An aluminum electrode comprising:
a bottom layer consisting of molybdenum; a top layer consisting of molybdenum; and an aluminum layer located between the bottom layer and the top layer, wherein the bottom layer, the top layer and the aluminum layer are formed at a temperature below 120° C. |
地址 |
BEIJING CN |