| 发明名称 | Semiconductor device, circuit substrate, and electronic device | ||
| 摘要 | A semiconductor device has a through electrode formed in a through hole which penetrates a Si substrate from one surface to the other surface of the Si substrate, wherein a rectangular electrode pad is provided on the other surface with an insulation film laid between the electrode pad and the other surface, an opening of the through hole on the one surface side is circular, an opening of the through hole on the other surface side is rectangular, and the area of the opening on the other surface side is made smaller than the area of the opening on the one surface side. | ||
| 申请公布号 | US9252082(B2) | 申请公布日期 | 2016.02.02 |
| 申请号 | US201414584591 | 申请日期 | 2014.12.29 |
| 申请人 | Seiko Epson Corporation | 发明人 | Matsuo Yoshihide |
| 分类号 | H01L23/48;H01L23/52;H01L29/40;H01L21/683;H01L21/768;H01L23/538 | 主分类号 | H01L23/48 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A semiconductor device, comprising: a substrate that has a first surface, a second surface and a through hole penetrating the substrate from the first surface to the second surface, wherein an opening of the through hole at the second surface is in a non-circular shape in a plan view, the non-circular shape of the opening of the through hole at the second surface is different from a shape of an opening of the through hole at the first surface, a size of the opening of the through hole at the second surface is smaller than other cross-sectional areas of the through hole in the plan view, and a shape of the other cross-sectional areas is different from the non-circular shape of the opening of the through-hole at the second surface. | ||
| 地址 | JP | ||