Ultra-shallow junction semiconductor field-effect transistor and method of making

摘要

An ultra-shallow junction semiconductor field-effect transistor and its methods of making are disclosed. In the present disclosure, a mixture film is formed on a semiconductor substrate with a gate structure formed thereon using a physical vapor deposition (PVD) process, which employs a mixture of metal and semiconductor dopants as a target. The PVD process is followed by annealing, during which ultra-shallow junctions and ultra-thin metal silicide are formed. After removing the mixture film remaining on the semiconductor substrate, an ultra-shallow junction semiconductor field-effect transistor is formed. Because the mixture film comprises metal and semiconductor dopants, ultra-shallow junctions and ultra-thin metal silicide can be formed in a same annealing process. The ultra-shallow junction thus formed can be used in semiconductor field-effect transistors for the 14 nm, 11 nm, or even further technology node.

主权项

1. A method of making an ultra-shallow junction semiconductor field-effect transistor, comprising:
A. forming a gate structure on a semiconductor substrate; B. using the gate structure as a mask, and using a metal and semiconductor dopant mixture as a target, depositing a film of the mixture on the semiconductor substrate by physical vapor deposition; C. performing annealing on the semiconductor substrate with the film of the mixture deposited thereon, to form metal silicide and ultra-shallow junctions, the ultra-shallow junction being a PN junction or a metal-semiconductor junction; and D. removing the film of the mixture remaining on a surface of the semiconductor substrate.