发明名称 WAFER PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method capable of successfully dividing a wafer where function layers such as low-permittivity insulator coating (Low-k film) are laminated on a surface of a substrate, along a division-scheduled line for zoning devices.SOLUTION: A processing method of a wafer where function layers laminated on a surface of a substrate are zoned by a plurality of division-scheduled lines and devices are formed in a plurality of regions, respectively, which are zoned by the plurality of division-scheduled lines comprises: a laser processing groove formation process of irradiating laser beams of a wavelength having absorptivity with the function layers on the division-scheduled lines along both sides of the width direction center to divide the function layers along the division-scheduled lines by forming at least two laser processing grooves; and a modified layer formation process of irradiating laser beams of a wavelength having transmissivity to the substrate from a rear face side of the wafer along the division-scheduled lines to form a modified layer which serves as a breaking start point inside the substrate and along the division-scheduled lines.SELECTED DRAWING: Figure 5
申请公布号 JP2016018881(A) 申请公布日期 2016.02.01
申请号 JP20140140432 申请日期 2014.07.08
申请人 DISCO ABRASIVE SYST LTD 发明人 NAKAMURA MASARU
分类号 H01L21/301;B23K26/364;B23K26/53;H01L21/304 主分类号 H01L21/301
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