| 摘要 |
PROBLEM TO BE SOLVED: To provide an art capable of detecting temperature with high accuracy.SOLUTION: A semiconductor device 1 comprises: a semiconductor substrate 10 on which an IGBT region 2 and a diode region 3 are arranged alternately and adjacent to each other; a temperature sense diode element 50 formed on a surface of the semiconductor substrate 10; IGBT elements 20 formed on the semiconductor substrate 10 in the IGBT region 2; and diode elements 30 formed on the semiconductor substrate 10 in the diode region 3. An amount of heat generation of one of the IGBT element 20 and the diode element 30 is larger than an amount of heat generation of the other, and the temperature sense diode element 50 is arranged on a surface of the region where the element of larger amount of heat generation is formed. |
