FIN FIELD EFFECT TRANSISTOR

摘要

A fin field effect transistor is provided. The fin field effect transistor comprises: a fin-shaped active pattern protruding from a substrate and extending in a first direction; a gate electrode extending in a second direction intersecting the active pattern; and a gate insulation film interposed between the gate electrode and the active pattern, wherein the active pattern includes a channel region defined by the gate electrode, and the channel region includes a lightly doped region doped with a first doping concentration and a heavily doped region doped with a second doping concentration higher than the first doping concentration.