| 发明名称 | Semiconductor device and write method | ||
| 摘要 | A semiconductor device includes a memory cell array including a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied, the first memory cell to which the forming voltage is applied, and the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other. | ||
| 申请公布号 | US9236123(B2) | 申请公布日期 | 2016.01.12 |
| 申请号 | US201414495775 | 申请日期 | 2014.09.24 |
| 申请人 | Micron Technology, Inc. | 发明人 | Maeda Akiko;Tsukada Shuichi;Jono Yusuke |
| 分类号 | G11C11/00;G11C13/00;G11C7/04;G11C16/20;G11C29/00 | 主分类号 | G11C11/00 |
| 代理机构 | Dorsey & Whitney LLP | 代理人 | Dorsey & Whitney LLP |
| 主权项 | 1. A semiconductor device, comprising: a memory cell array comprising a plurality of first and second memory cells each comprising a variable resistance element that establishes an electrical resistance that changes in response to an application of a write voltage after a forming voltage has been applied; the first memory cell to which the forming voltage is applied, and the second memory cell to which the forming voltage is not applied, and the second memory cell being configured to store one of first and second logic values constituting first information, the first and second logic values being different from each other. | ||
| 地址 | Boise ID US | ||