发明名称 |
LOCALIZED STRESS MODULATION FOR OVERLAY AND EPE |
摘要 |
Embodiments of the disclosure provide apparatus and methods for localized stress modulation for overlay and edge placement error (EPE) using electron or ion implantation. In one embodiment, a process for correcting overlay error on a substrate generally includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining doping parameters to correct overlay error or substrate distortion based on the overlay error map, and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. Embodiments may also provide performing a doping treatment process on the substrate using the determined doping repair recipe, for example, by comparing the overlay error map or substrate distortion with a database library stored in a computing system. |
申请公布号 |
US2016005662(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201514736020 |
申请日期 |
2015.06.10 |
申请人 |
Applied Materials, Inc. |
发明人 |
YIEH Ellie Y.;DAI Huixiong;NEMANI Srinivas D.;GODET Ludovic;BENCHER Christopher Dennis |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for correcting overlay error on a substrate comprising:
performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion map or an overlay error map; determining doping parameters to correct overlay error or substrate distortion based on the substrate distortion map or the overlay error map; and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. |
地址 |
Santa Clara CA US |