发明名称 LOCALIZED STRESS MODULATION FOR OVERLAY AND EPE
摘要 Embodiments of the disclosure provide apparatus and methods for localized stress modulation for overlay and edge placement error (EPE) using electron or ion implantation. In one embodiment, a process for correcting overlay error on a substrate generally includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining doping parameters to correct overlay error or substrate distortion based on the overlay error map, and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. Embodiments may also provide performing a doping treatment process on the substrate using the determined doping repair recipe, for example, by comparing the overlay error map or substrate distortion with a database library stored in a computing system.
申请公布号 US2016005662(A1) 申请公布日期 2016.01.07
申请号 US201514736020 申请日期 2015.06.10
申请人 Applied Materials, Inc. 发明人 YIEH Ellie Y.;DAI Huixiong;NEMANI Srinivas D.;GODET Ludovic;BENCHER Christopher Dennis
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项 1. A method for correcting overlay error on a substrate comprising: performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion map or an overlay error map; determining doping parameters to correct overlay error or substrate distortion based on the substrate distortion map or the overlay error map; and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error.
地址 Santa Clara CA US