发明名称 |
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED TRANSISTORS |
摘要 |
Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (SiGe) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and the cladding deposition can occur at a plurality of locations within the process flow. In some cases, the built-in stress from the cladding layer may be enhanced with a source/drain stressor that compresses both the fin and cladding layers in the channel. In some cases, an optional capping layer can be provided to improve the gate dielectric/semiconductor interface. In one such embodiment, silicon is provided over a SiGe cladding layer to improve the gate dielectric/semiconductor interface. |
申请公布号 |
EP2878013(A4) |
申请公布日期 |
2015.12.30 |
申请号 |
EP20130822277 |
申请日期 |
2013.06.12 |
申请人 |
INTEL CORPORATION |
发明人 |
CEA, STEPHEN M.;MURTHY, ANAND S.;GLASS, GLENN A.;AUBERTINE, DANIEL B.;GHANI, TAHIR;KAVALIEROS, JACK T.;KOTLYAR, ROZA |
分类号 |
H01L29/78;H01L21/336;H01L29/10;H01L29/165 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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