| 发明名称 | Composite substrate of gallium nitride and metal oxide | ||
| 摘要 | The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia. | ||
| 申请公布号 | US9224817(B2) | 申请公布日期 | 2015.12.29 |
| 申请号 | US201313781509 | 申请日期 | 2013.02.28 |
| 申请人 | SixPoint Materials, Inc.;Seoul Semiconductor Co., Ltd. | 发明人 | Hashimoto Tadao |
| 分类号 | H01L29/20;H01L21/02;H01L29/32 | 主分类号 | H01L29/20 |
| 代理机构 | Strategic Innovation IP Law Offices, P.C. | 代理人 | Strategic Innovation IP Law Offices, P.C. |
| 主权项 | 1. A composite substrate for device fabrication comprising a first layer composed of GaxAlyIn1-x-yN (0<x<1, 0<x+y1) and a second layer attached to a surface of the first layer, wherein the second layer is composed of a metal oxide which can be removed by in-situ etching in a device fabrication reactor, and wherein the metal oxide contains a mixture of silicon dioxide and at least one oxide of gallium, aluminum, indium, zinc, magnesium, calcium, sodium, tin and titanium, and wherein the second layer is sufficiently thick to prevent further oxidation of the first layer and sufficiently thin to be removed by said in-situ etching at 1050° C. or less with ammonia. | ||
| 地址 | Buellton CA US | ||