Semiconductor device and manufacturing method thereof

摘要

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

主权项

1. A light emitting device comprising:
a flexible substrate; a transistor over the flexible substrate; a first electrode electrically connected to the transistor; an insulating film covering an end portion of the first electrode; a layer comprising a light emitting material over the first electrode; and a second electrode over the layer comprising the light emitting material, wherein the insulating film has a cross-sectional shape, wherein the cross-sectional shape comprises a first curved line, a second curved line, and a third curved line interposed between the first curved line and the second-curved line, wherein the third curved line has a first center of curvature located outside the cross-sectional shape, and wherein a thickness of the insulating film at the first curved line is larger than a thickness of the insulating film at the end portion of the first electrode.