METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

摘要

Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

主权项

1. A method of forming patterns, the method comprising:
forming a photoresist pattern on a target layer, the photoresist pattern including a first opening exposing a first region of the target layer; forming a capping layer at sidewalls of the photoresist pattern defining the first opening, wherein the capping layer includes an acid source; forming an insoluble region around the first opening in the photoresist pattern by diffusing acid obtained from the acid source from the capping layer to the inside of the photoresist pattern; forming a second opening exposing a second region spaced apart from the first region in the target layer by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween, in the photoresist pattern; and etching the target layer by using the insoluble region as an etch mask.