| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase growth apparatus that prevents the arrival of a reactant gas remaining by convection to a vapor phase growth film. SOLUTION: The epitaxial growth apparatus 100 includes: a holder 110 for supporting a substrate; a shower head 130 which supplies a material gas to form a vapor phase growth film toward the substrate from a direction crossing diagonally the processing surface of the substrate; an inkjet nozzle 132 which supplies a predetermined gas into a space between the shower head 130 and the substrate from a direction parallel to the processing surface of the substrate; and an exhaust port 136 to discharge the predetermined gas passing through the space. Thus, the formed vapor phase growth film can be protected. COPYRIGHT: (C)2009,JPO&INPIT
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