| 摘要 |
PROBLEM TO BE SOLVED: To reduce reflection of incident light to the outside caused by a plasma SiN film and the transmission quantity thereof by completely removing an SiON film and the plasma SiN film, to improve photodetection sensitivity by further shortening the distance from a microlens to a substrate surface, and to suppress color phase irregularity and sensitivity irregularity by further reducing multiple reflection of light between the microlens and substrate surface. SOLUTION: A fourth insulating film 22 is flattened and provided below a filter 23 of each color, and between the filter 23 and fourth insulating film 22, neither an antireflective SiON film nor a plasma SiN film 25 for passivation and hydrogen sintering is left and provided, as is the conventional case. COPYRIGHT: (C)2009,JPO&INPIT
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